No. | Partie # | Fabricant | Description | Fiche Technique |
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Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx16/4Mbitx8) ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automa |
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Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V L |
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Sharp Microelectronics |
Flash Memory 64Mbit (4Mbitx16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automa |
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Sharp Microelectronics |
Flash Memory 8M (1Mb x 8) ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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Sharp Microelectronics |
Flash Memory 8M (1Mb x 8) ..................................................... 3 1.2 Product Overview ................................................ 3 2.0 PRINCIPLES OF OPERATION ............................. 7 2.1 Data Protection .......................................... |
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Sharp Microelectronics |
Flash Memory 8Mbit (512Kbitx16 / 1Mbitx8) ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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Sharp Microelectronics |
Flash Memory |
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Sharp Microelectronics |
Flash Memory 16Mbit (2Mbitx8) ..................................................... 3 1.2 Product Overview ................................................ 3 2.0 PRINCIPLES OF OPERATION ............................. 7 2.1 Data Protection .......................................... |
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Sharp Microelectronics |
Flash Memory 16Mbit (2Mbitx8) ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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Sharp Microelectronics |
Flash Memory 32M (4MB x 8 / 2M x 16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode ■ User-Configurable x8 or x16 Operation ■ SRAM- |
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Sharp Microelectronics |
Flash Memory 32M (4MB x 8 / 2MB x 16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode ■ User-Configurable x8 or x16 Operation ■ SRAM- |
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Sharp Microelectronics |
Flash Memory 16Mbit (2Mbitx8/1Mbitx16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ Extended Cycling Capability 100,000 Block Erase Cycles 3.2 Million Block Erase Cycles/Chip ■ Low Power Management Deep Power-Down Mode Automatic Po |
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Sharp Microelectronics |
Flash Memory 16M (2Mb x 8 / 1Mb x 16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ Extended Cycling Capability 100,000 Block Erase Cycles 3.2 Million Block Erase Cycles/Chip ■ Low Power Management Deep Power-Down Mode Automatic Po |
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Sharp Microelectronics |
Flash Memory 32Mbit (4Mbitx8/2Mbitx16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ SRAM-Compatible Write Interface ■ User-Configurable x8 or x16 Operation ■ Industry-Standard Packaging 56-Lead SSOP ■ ETOXTM* V Nonvolatile Flash Te |
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Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx8/1Mbitx16x2Bank) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions ■ Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode ■ Automated Write and Erase Command User Interf |
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Sharp Microelectronics |
Flash Memory 8Mbit (1Mbitx8) ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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