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Sharp Electrionic Components |
Flash Memory 32M (2M bb 16/4M bb 8) ........................................................................ 5.1 Three-Line Output Control ........................................ 27 5.2 RY/BY# and WSIM Polling ....................................... 27 5.3 Power Supply Decoupling ... |
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Sharp |
TFT LCD |
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Sharp Electrionic Components |
4M Flash File Memory |
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Sharp Electrionic Components |
4M (512K bb 8/ 256K bb 16) Flash Memory 56-PIN TSOP 4M (512K × 8, 256K × 16) Flash Memory TOP VIEW • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP |
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Sharp Electrionic Components |
8M Flash Memory |
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Sharp |
8 MBIT(1 MBIT x 8)FLASH MEMORY |
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Sharp Electrionic |
32M (x16) Flash Memory • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V L |
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Sharp Electrionic |
8M (x8/x16) Flash Memory ........................................................................ 3 1.2 Product Overview......................................................... 3 1.3 Product Description...................................................... 4 1.3.1 Package P |
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Sharp Electrionic Components |
4Mbit Flash Memory |
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Sharp Electrionic Components |
4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory |
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Sharp Electrionic Components |
4M (512K bb 8) Flash Memory 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 |
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Sharp Electrionic Components |
4M (512K bb 8) Flash Memory 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 |
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Sharp Electrionic Components |
4M (512K bb 8) Flash Memory 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 |
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Sharp Electrionic Components |
16M (1M bb 16/ 2M bb 8) Flash Memory 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation (3 V VPP) – 2.7 - 3.6 V Write-Erase Operation VSSL CE1 LX A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 CX RP A11 A10 A9 A8 |
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Sharp Electrionic Components |
16M (1M bb 16/ 2M bb 8) Flash Memory 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • • • • • • • User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.43 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently |
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Sharp Electrionic Components |
16 Mbit(1 Mbit x 16/ 2 Mbit x 8) |
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Sharp Electrionic Components |
16 M-bit (2 MB x 8) SmartVoltage Flash Memories – Absolute protection with VPP = GND – Flexible block locking – Block erase/byte write lockout during power transitions • SRAM-compatible write interface • High-density symmetrically-blocked architecture – Thirty-two 64 k-byte erasable blocks • Enhan |
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Sharp Electrionic Components |
16Mbit Flash Memory |
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Sharp Electrionic Components |
16M Flash Memory 2M (bb8) |
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Sharp Electrionic Components |
16M (1M bb 16/ 2M bb 8) Flash Memory 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • • • • • • • User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independentl |
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