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Sharp F64 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
F640BFHEPTTLHFA

Sharp
LH28F640BFHEPTTLHFA

• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms
• 3.0V L
Datasheet
2
LH28F640BFHE-PTTLHFA

Sharp
64-Mbit Flash Memory

• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms
• 3.0V L
Datasheet
3
LH28F640BF

Sharp
(LH28FxxxBF) Page Mode Dual Work Flash Memory
............................................................. 2 1.2 Definition of Block, Plane and Partition ........... 2 1.3 Product Overview ............................................. 2 1.4 Product Description...................................
Datasheet
4
LH28F640BFHE-PBTL70A

Sharp Microelectronics
Flash Memory 64Mbit (4Mbitx16)

• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automa
Datasheet
5
LH28F640BFHG-PBTLZ7

Sharp Electrionic
64M (x16) Flash Memory

• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automa
Datasheet
6
LH28F640SP

Sharp Electrionic
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory

• Individual Block Lock
• Absolute Protection with VPEN≤VPENLK
• Block Erase, (Page Buffer) Program Lockout during Power Transitions „ Automated Erase/Program Algorithms
• Program Time 210µs (Typ.)
• Block Erase Time 1s (Typ.) „ Cross-Compatible Comm
Datasheet
7
LH28F640SPHT-PTL12

Sharp Electrionic
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory

• Individual Block Lock
• Absolute Protection with VPEN≤VPENLK
• Block Erase, (Page Buffer) Program Lockout during Power Transitions „ Automated Erase/Program Algorithms
• Program Time 210µs (Typ.)
• Block Erase Time 1s (Typ.) „ Cross-Compatible Comm
Datasheet



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