No. | Partie # | Fabricant | Description | Fiche Technique |
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Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use fo |
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Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplif |
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Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f |
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Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f |
|
|
|
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 f |
|
|
|
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplif |
|
|
|
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use fo |
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