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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 00 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ |
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Semikron International |
SKIIP32NAB125T12 5 A; Tj = 125 °C tr www.DataSheet4U.com Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 50 |
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Semikron |
3-phase bridge rectifier + IGBT braking chopper j = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 100 A; Tj = 125 °C Rgon = Rgoff = 11 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh V ns ns ns ns mJ nF K/W UL recognized file no. E63532 • spec |
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Semikron International |
3-phase bridge rectifier + braking chopper + 3-phase bridge inverter &LHV 9&( 9 9*( 9 0+] 5WKMK SHU ,*%7 'LRGH ,QYHUWHU 9) 9(& 972 U7 ,550 4UU (RII 5WKMK 9) 5WKMK 576 0 &DVH ,) 7M 7M &KRSSHU ± ± ± ± ± ± ± ± ± ± ± ± 0 ± ± ± ± 9 9 PΩ $ µ& P.: 9 .: |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power °C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 4,5 – – – – – – – – 250 600 – – 2,5(3,1) 44 56 380 70 13 3,3 – – – – 1,0 1,8 1,1 5 0,9 – 3 150 – – – 125 3,0(3,7) 100 100 500 100 – – 0,5 V V mΩ K/W V V mΩ K/W mA V mA mA mA V/µ |
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Semikron |
SKIIP82AC12 Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron International |
3-phase bridge rectifier + braking chopper + 3-phase bridge inverter °C per diode Diode - Rectifier VF Rthjh IF = 35 A, Tj = 25 °C per diode Temperature Sensor RTS T = 25 / 100 °C Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data M1 Case case to heatsink, SI Units mechanical outline se |
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Semikron International |
3-phase bridge rectifier + braking chopper + 3-phase bridge inverter 5 A; Tj = 125 °C tr Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 50 A, VR = – 600 V IRR |
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Semikron |
IGBT 3-phase bridge inverter Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron International |
1-phase bridge rectifier + 3-phase bridge inverter |
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Semikron |
IGBT POWER MODULE VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 |
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Semikron International |
IGBT • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for |
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Semikron |
IGBT POWER MODULE |
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Semikron |
IGBT POWER MODULE & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & 'LRGH 5H.WLILHU 7HPSHUDWXUH 6HQVRU , ?0DUNHWLQ?)5$0('$7?0,1,B6.?QHEWIP & 6KXQWV 6.LL3 1(% , 7 0H.KDQL.DO 'DWD |
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Semikron |
IGBT POWER MODULE 9) 9(& 972 U7 ,550 4UU (RII 5WKMK 9) 5WKMK 576 5.V G. 5.V D. 0 &DVH ,) 7M 7M &KRSSHU $ 7M & & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & PLQ W\S PD[ 8QLWV 9 QV QV Q |
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Semikron |
IGBT Power Module WU WG RII 5JRQ 5JRII Ω WI LQGX.WLYH ORDG (RQ (RII &LHV 9&( 9 9*( 9 0+] 5WKMK SHU ,*%7 9) 9(& 972 U7 ,550 4UU (RII 5WKMK 9) 5WKMK 576 0 &DVH $ 7M & & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH |
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Semikron International |
3-phase bridge rectifier 3-phase bridge inverter Characteristics Symbol Conditions IGBT - Inverter +#<> + #< > +#<H> # LG##L <3F> <> <> # <#> +: / +# +<H> <3F> ? O # , / $ ) 3 / |
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Semikron International |
IGBT !"#$%$% & ' 1) 8) D // HI D I J :@ 8 : :7< 7 7A 8 #", 94 : 8 #" |
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Semikron International |
IGBT ! " #$%&%' Typical Applications* ( %)& *+ , -)& *. Remarks |
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Semikron International |
IGBT • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* • Inverter up to 8 kVA • Typical motor power 4 kW Remarks • M |
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