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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 201 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested Oct 2016 BVD |
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SemiHow |
N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2 |
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SemiHow |
N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 201 |
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SemiHow |
N-Channel Trench MOSFET High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Spe |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.9 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2 |
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SemiHow |
N-Channel Trench MOSFET High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Spe |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7.0 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.8 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 201 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 150nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.1 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested Sep 2014 BV |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested November 2014 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 200 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 155nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.7 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 20 |
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SemiHow |
N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V 100% Avalanche Tested Jan 2015 BVDS |
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SemiHow |
N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 120 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.7 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2 |
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SemiHow |
N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 155nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.6 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 20 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 150nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 |
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