| No. | Partie # | Fabricant | Description | Fiche Technique |
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SeCoS |
N-Channel Super Junction Power MOSFET Advanced Super Junction Technology Super Low Gate Charge Green Device Available MARKING 30N60H = Date Code ORDER INFORMATION Part Number Type SSR30N60H-C Lead (Pb)-free and Halogen-free Gate Drain Source REF. A B C D E |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0. |
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SeCoS |
N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe ITO-220 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0. |
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SeCoS |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source ITO-220 BN MA D E H JC K LL G F REF. A B C D E F G Millimeter Min. Max. |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0. |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0. |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 |
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SeCoS |
N-Channel Super Junction Power MOSFET Advanced Super Junction Technology Super Low Gate Charge Green Device Available MARKING 52N60H = Date Code ORDER INFORMATION 2 Part Number Type Drain SSR52N60H-C Lead (Pb)-free and Halogen-free 1 Gate 3 Source REF. A B C D E F |
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