| No. | Partie # | Fabricant | Description | Fiche Technique |
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SeCoS |
N-Channel Enhancement Mode Power MosFET * Fast Switching * Simple Drive Requirement * Dynamic dv/dt Rating * Repetitive Avalanche Rated D REF. A b L4 c L3 L1 E G Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter |
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SeCoS |
P-Channel Enhancement Mode Power MosFET * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1 |
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SeCoS |
P-Channel Enhancement Mode Power Mos.FET * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1 |
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