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N-Ch Enhancement Mode Power MOSFET 40V/5A RDS(ON)≦35mΩ @VGS=10V RDS(ON)≦45mΩ @VGS=4.5V Reliable and Rugged Green Device Available APPLICATION Power Management in Notebook Computer Portable Equipment and Battery Powered Systems SC-59 A L 3 Top View CB 1 1 2 K E D F |
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SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3021 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMG3021-C Lead (Pb)-free and Haloge |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4KN25 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMG4KN25-C Lead (Pb)-free and Halo |
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SeCoS |
N-Channel MOSFET * Lower Gate Charge * Small Package Outline H Drain Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Lin |
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SeCoS |
P-Channel Enhancement Mode MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device MARKING 3407 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 1 2 K E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 2 |
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SeCoS |
P-Channel MOSFET * High-Speed Switching * Simple Drive Requirment * Low On-Resistance All Dimension in mm D Marking : 3J14 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Dra |
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SeCoS |
P-Channel MOSFET Simple Drive Requirement Small Package Outline MARKING 5409 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1. |
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SeCoS |
P-Channel MosFET Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PRODUCT SUMMARY PRODUCT SUMMARY VDS |
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SeCoS |
N-Channel Enhancement Mode Power MosFET * Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum www.DataSheet4U.com Drain-Source Voltage Gate-Source Voltage Continuous Drain Current C |
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P-Channel Enhancement Mode Power MosFET * Simple Gate Drive * Small package outline * Fast switching speed H G J K L Drain Gate Source S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm G Marking : 1333 S Abso |
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SeCoS |
P-Channel MOSFET * Ultrahigh-Speed Switching * 4V Drive * Low On-Resistance Gate Source H J K H Drain L S D All Dimension in mm Marking : 3314 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Simple Drive Requirement Small Package Outline F G H J REF. MARKING 5402 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L M |
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SeCoS Halbleitertechnologie |
P-Channel MOSFET Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J MARKIN |
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SeCoS |
N-Channel MOSFET Simple Drive Requirement Small Package Outline MARKING 5406 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.7 |
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SeCoS |
P-Channel MosFET A L 3 Top View 21 B D G C * Simple drive requirement * Small package outline Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System H Drain Gate Source G Marking : 2309 Absolute Maximum Ratings Param |
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N-Channel MosFET * Low on-resistance * Capable of 2.5V gate drive * Small package outline C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dime |
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SeCoS |
P-Channel MosFET * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min |
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SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSi |
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N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. Application DC-DC converters and power management in |
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P-Channel MosFET * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G Marking : 2303 Absol |
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