No. | Partie # | Fabricant | Description | Fiche Technique |
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SeCoS Halbleitertechnologie |
Plastic Encapsulate ESD Protection Diodes Bi-directional ESD Protection of One Line Low Capacitance: 10pF(Typ.) Low Reverse Stand−off Voltage: 5V Low Reverse Clamping Voltage Low Leakage Current Fast Response Time DFN0201 REF. A B C D Millimeter Min. Max. 0.56 0.67 0.27 0.37 0 |
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SeCoS Halbleitertechnologie |
N Channel MOSFET Low on-resistance Fast switching speed Drive circuits can be simple Parallel use is easy Low voltage drive makes this device ideal for portable equipment SOT-723 1 GATE 2 SOURCE 3 DRAIN APPLICATION Interfacing Switching MARKING REF. KN PACKAGE I |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Energy Efficient 1 GATE 2 SOURCE 3 DRAIN APPLICATION DC-DC converters, load switching, power management in portable and battery –powered products such as computers, printers, cellular and cordless telephones. REF. A B C D E Millimeter Min. Max. 1.15 |
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