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SeCoS Halbleitertechnologie SN DataSheet

No. Partie # Fabricant Description Fiche Technique
1
SNESD05C

SeCoS Halbleitertechnologie
Plastic Encapsulate ESD Protection Diodes

 Bi-directional ESD Protection of One Line
 Low Capacitance: 10pF(Typ.)
 Low Reverse Stand−off Voltage: 5V
 Low Reverse Clamping Voltage
 Low Leakage Current
 Fast Response Time DFN0201 REF. A B C D Millimeter Min. Max. 0.56 0.67 0.27 0.37 0
Datasheet
2
SSN3541

SeCoS Halbleitertechnologie
N Channel MOSFET
Low on-resistance Fast switching speed Drive circuits can be simple Parallel use is easy Low voltage drive makes this device ideal for portable equipment SOT-723 1 GATE 2 SOURCE 3 DRAIN APPLICATION Interfacing Switching MARKING REF. KN PACKAGE I
Datasheet
3
SSN3043

SeCoS Halbleitertechnologie
N-Channel MOSFET
Energy Efficient 1 GATE 2 SOURCE 3 DRAIN APPLICATION DC-DC converters, load switching, power management in portable and battery
  –powered products such as computers, printers, cellular and cordless telephones. REF. A B C D E Millimeter Min. Max. 1.15
Datasheet



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