| No. | Partie # | Fabricant | Description | Fiche Technique |
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SeCoS |
NPN Transistor Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2 |
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SeCoS |
NPN Transistor Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2 |
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SeCoS |
NPN Transistor High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE Product-Rank 2SD2114-V Range 820~1800 Marking BBV SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J PACKAGE INFORMATION Package MPQ SOT-23 3K Lea |
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SeCoS |
NPN Transistor Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~9 |
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SeCoS Halbleitertechnologie GmbH |
NPN Transistor z Darlington connection for a high hFE z High input impedance MARKING：R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE |
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SeCoS |
(SSCD202 - SSCD210) 2.0 AMP Surface Mount Schottky Barrier Rectifiers * * * * * * * * * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package Built-in strain relief Metal to silicon rectifier , majority carrier conduction Low power loss , High efficiency High current capabili |
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SeCoS |
NPN Plastic Encapsulated Transistor Small Flat Package General Purpose Application CLASSIFICATION OF hFE(1) Product-Rank 2SD2153-U Range 560~1200 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 2SD2153-V 820~1800 MARKING DN PACKAGE INFORMATION Package MPQ |
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SeCoS |
NPN Transistor Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING CFR CFS 1 Base 3 Emitter SOT-89 4 A E B F G H J 123 C BCE D K L REF. A B C D E F Millimeter Min. Max. |
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SeCoS |
(SSCD202 - SSCD210) 2.0 AMP Surface Mount Schottky Barrier Rectifiers * * * * * * * * * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package Built-in strain relief Metal to silicon rectifier , majority carrier conduction Low power loss , High efficiency High current capabili |
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SeCoS |
(SSCD202 - SSCD210) 2.0 AMP Surface Mount Schottky Barrier Rectifiers * * * * * * * * * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package Built-in strain relief Metal to silicon rectifier , majority carrier conduction Low power loss , High efficiency High current capabili |
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SeCoS |
(SSCD202 - SSCD210) 2.0 AMP Surface Mount Schottky Barrier Rectifiers * * * * * * * * * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package Built-in strain relief Metal to silicon rectifier , majority carrier conduction Low power loss , High efficiency High current capabili |
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SeCoS |
2SD2142 z Darlington connection for a high hFE z High input impedance MARKING：R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE |
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