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SeCoS |
Plastic Encapsulate Transistors * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
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SeCoS |
PNP Transistor Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperatu |
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SeCoS |
PNP Transistor Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 |
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SeCoS |
PNP Silicon General Purpose Transistor 2 B 1 G H C J K G Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150 J K L S H 3 2 1 All Dimension in mm COLLECTOR 3 2 |
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SeCoS |
PNP Plastic Encapsulated Transistor High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4 PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING ZL 1 Base Collector 24 3 Emitter BD F REF. A B C D E |
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SeCoS |
PNP Plastic Encapsulated Transistor High Collector Power Dissipation Complementary to 2SD1616A G H TO-92 CLASSIFICATION OF hFE(1) Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600 K A 1Emitter 2Collector 3Base J D REF. Millimeter Min. Max. 4.40 4.70 4.30 4. |
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SeCoS |
PNP Silicon Medium Power Transistor Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R 180~390 BAR SOT-89 4 123 A EC BD PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch Collec |
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SeCoS |
PNP Silicon Epitaxial Paner Transistors 3 High DC Current Gain Complementary to 2SD1819A K Top View 1 2 C B 1 2 E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1218A-Q 160~260 BQ1 2SB1218A-R 210~340 BR1 2SB1218A-S 290~460 BS1 REF. A B C D E F G Millimeter Min. Max. 1.80 |
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SeCoS |
PNP Silicon Transistor Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base |
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SeCoS |
PNP Silicon General Purpose Transistor For general amplification Complementary of the 2SD601A CLASSIFICATION OF hFE Product-Rank 2SB709A-Q Range 160~260 Marking BQ1 2SB709A-R 210~340 BR1 2SB709A-S 290~460 BS1 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-2 |
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SeCoS |
PNP Plastic Encapsulated Transistor High Collector Power Dissipation Complementary to 2SD1616 CLASSIFICATION OF hFE(1) Product-Rank 2SB1116-L 2SB1116-K Range 135~270 200~400 2SB1116-U 300~600 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter |
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SeCoS |
PNP Transistor High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA) Complimentary to 2SD596 MARKING Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 Range 110~180 135~220 170~270 Product-Rank 2SB624-BV4 2SB624-BV5 Range 200~320 250~400 PACKAGE INF |
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SeCoS |
PNP Transistor |
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SeCoS |
PNP Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free ● Power dissipation PCM: 0.9 W (Tamb=25℃) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range G TJ, TSTG |
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SeCoS |
PNP Transistor Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB561-B Range 85~170 2SB561-C 120~240 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3 |
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SeCoS |
PNP Transistor Large collector power dissipation PC Complementary to 2SD874A PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING B = hFE ranking Collector Base Emitter SOT-89 A C D EM B J K F I H G L REF. A B C D E F Millimeter Min |
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SeCoS |
PNP Transistor Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperatu |
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SeCoS |
PNP Silicon Medium Power Transistor b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dim |
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SeCoS |
PNP Silicon Medium Power Transistor Low VCE(sat) RoHS Compliant Product CLASSIFICATION OF hFE Product-Rank 2SB1188-Q Range 120~270 Marking BCQ 2SB1188-R 180~390 BCR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Coll |
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SeCoS |
Low Frequency Transistor Low VCE(sat).VCE(sat)≦ -0.5V (IC / IB= -0.5A /-50mA) IC= -0.8A MECHANICAL DATA Case: SOT-23 CLASSIFICATION OF hFE Product-Rank 2SB1197K-Q Range 120~270 Marking AHQ 2SB1197K-R 180~390 AHR PACKAGE INFORMATION Package MPQ SOT-23 3K Leader |
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