SeCoS 1.5 fiche technique

No.	Partie #	Fabricant	Description
1	C3205	SeCoS	NPN Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J
2	A1020	SeCoS	PNP Transistor Power Amplifier Applications MARKING A1020 Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 CLASSIFICATION OF hFE(1) Product-Rank A1020-O Range 70~140 A1020-Y 120~240 ORDER INFORMATION Part Number A1020
3	D2118	SeCoS	NPN Transistor Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2
4	B772	SeCoS	PNP Transistor  Low frequency power amplifier  High Current  Low Speed Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank B772-R Range 60~120 B772-O 100~200 B772-Y 160~320 B772-GR 200~400
5	S8050	SeCoS	NPN Transistor Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 3 1 Base 2 Emitter A L 3 Top View 12 BS VG C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200
6	A42	SeCoS	NPN Transistor Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 1 2 3 1 23 1. EMITTER 2. BASS 3 . COLLECTOR ELEC
7	DTA114ESA	SeCoS	PNP Digital Transistors  Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).  The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of t
8	C3199	SeCoS	NPN Transistor TO-92  High Current Capability  High DC Current Gain  Small Package APPLICATIONS  Audio Amplifier Applications  AM Amplifier Applications GH J AD B K CLASSIFICATION OF hFE Product-Rank 2SC3199-O 2SC3199-Y Range 70~140 120~240 2SC3199-GR
9	C1815	SeCoS	NPN Transistor Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltag
10	S8550	SeCoS	PNP Silicon Plastic-Encapsulate Transistors Complimentary to S8050 Collector Current: IC=0.5A MARKING: 2TY RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS C D H K MAXIMUM RATINGS (TA=25OC unless otherwise noted
11	2N7000	SeCoS	N-Channel Enhancement Mode Power MosFET  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability APPLICATIONS  Load switch for portable devices  DC/DC converter MARKING 2N 7000 021  D  G ABSOLUTE
12	DTA114EUA	SeCoS	PNP Digital Transistors  Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).  The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of t
13	40N03	SeCoS	N-Channel Enhancement Mode PowerMos FET * Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Abso
14	UMX1N	SeCoS	Dual NPN General Purpose Transistors  Two 2SC2412K chips in a package.  Mounting possible with SOT-363 automatic mounting machines.  Transistor elements are independent, eliminating interference.  Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT (3) (2) (1) Tr1 Tr2 (4)
15	C1008	SeCoS	NPN Plastic Encapsulated Transistor  General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400 TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter
16	MMBT3904W	SeCoS	General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary PNP Type Available (MMBT3906W) · Ideal for Medium Power Amplification and Switching COLLECTOR 3 3 A L 3 Top View 12 BS VG
17	A1015	SeCoS	PNP Transistor Power Dissipation CLASSIFICATION OF hFE Product-Rank A1015-O Range 70~140 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 GH A1015-Y 120~240 A1015-GR 200~400 J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D
18	SE7909	SeCoS	Negative Voltage Regulator of these regulators make them essentially immune to overload. In addition to use as fixed-voltage regulators, thesedevices can be used with external components to obtain adjustable output voltage and current and also as the power pass element in prec
19	SMG4008-C	SeCoS	N-Ch Enhancement Mode Power MOSFET  40V/5A RDS(ON)≦35mΩ @VGS=10V RDS(ON)≦45mΩ @VGS=4.5V  Reliable and Rugged  Green Device Available APPLICATION  Power Management in Notebook Computer  Portable Equipment and Battery Powered Systems SC-59 A L 3 Top View CB 1 1 2 K E D F
20	2SC1008	SeCoS	NPN Transistor  General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400 TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter