| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR ain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 MIN 200 2SC3858 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2 |
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SavantIC |
Silicon NPN Power Transistors itter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 50 MIN 120 6 2SC3854 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. |
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Savantic |
Silicon NPN Power Transistors llector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Fall time CONDITIONS IE=200mA , IC=0 IC=6A ;IB=1.5A IC=6A ;IB=1.5A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A |
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SavantIC |
Silicon NPN Power Transistors ctor-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 600 V 6V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector |
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SavantIC |
SILICON POWER TRANSISTOR ut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ;IB=0 IC=2A ;IB=50mA VCB=80V; IE=0 VEB=6V; IC=0 IC=0.5A ; VCE=4V IC=0.2A ; VCE=12V f=1MHz;VCB=10V 200 MIN 60 SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE fT |
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SavantIC |
Silicon NPN Power Transistors ration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40A Fall ti |
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SavantIC |
Silicon NPN Power Transistors sat Collector-emitter saturation voltage IC=5A ;IB=1.2A VBEsat Base-emitter saturation voltage ICBO Collector cut-off current ICES Collector cut-off current IEBO Emitter cut-off current IC=5A ;IB=1.2A VCB=800V ;IE=0 VCE=1500V; RBE=0 VEB=4V ;IC= |
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SavantIC |
SILICON POWER TRANSISTOR Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A; IB=0.4A IC=2A ;IB=0.4A VCB=450V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V IC=0.1A ; VCE=10V f=1MHz;VCB=10V 10 MIN 400 2SC3822 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT |
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SavantIC |
SILICON POWER TRANSISTOR 1A ; VCE=4V IC=0.2A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS SYMBOL 2SC3851 2SC3851A MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 0.5 0.1 0.1 0.1 40 15 60 320 MHz pF V mA mA mA VCEsat Collector-emitter saturation |
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SavantIC |
SILICON POWER TRANSISTOR citance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A ;IB=0.5A VCB=200V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 MIN 180 2SC3856 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 2.0 100 100 1 |
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SavantIC |
SILICON POWER TRANSISTOR s otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR ff current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 1 |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA;IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V 15 8 30 MH |
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SavantIC |
SILICON POWER TRANSISTOR lector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 10 M |
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SavantIC |
SILICON POWER TRANSISTOR age Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40A Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1.2 |
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SavantIC |
Silicon NPN Power Transistors er cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 50 MIN 140 2SC3855 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V 2.0 100 100 |
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SavantIC |
Silicon NPN Power Transistors 0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain fT Transition frequency VCB=500V ;IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V COB Output capacita |
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SavantIC |
SILICON POWER TRANSISTOR t Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA ; IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=600V ;IE=0 VEB=10V; IC=0 IC=2A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz ; VCB=10V 10 MIN 500 2SC3830 SYMBOL V(BR) |
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SavantIC |
SILICON POWER TRANSISTOR off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A IC=3A; IB=0.3A VCB=200V; IE=0 VEB=8V; IC=0 IC=0.6A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=12V |
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SavantIC |
SILICON POWER TRANSISTOR ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A IC=3A; IB=0.3A VCB=200V; IE=0 VEB=8V; IC=0 IC=3A ; VCE=4V IC=0. |
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