No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
SavantIC |
SILICON POWER TRANSISTOR tage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IE=10mA ; IC=0 IC=2A; IB=0.5A IC=2A; IB=0.5A VCB=750V; IE=0 VEB |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR tage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance CONDIT |
|
|
|
Savantic |
Silicon NPN Power Transistors IE=1mA; IC=0 6 V V(BR)CBO Collector-base breakdown votage IC=1mA; IE=0 400 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.0 A 2.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.0 A 2.5 V ICBO Collector cut-off cu |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR llector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance CONDITIONS IE |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IE=1mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4 |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IE=1mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5 |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR itter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=100mA ;IB=0;L=25mH IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCE=rated;VBE=0 Tj=125 VEB=1 |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ge Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IE=1mA ;IC=0 IC=100 |
|
|
|
SavantIC |
SILICON POWER TRANSISTOR votage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency Fall time CONDITIONS IC=0.1A; |
|