| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR akdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1 |
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SavantIC |
SILICON POWER TRANSISTOR stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VC |
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SavantIC |
SILICON POWER TRANSISTOR com S2000 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH IE=1mA ;IC=0 IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10 |
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SavantIC |
SILICON POWER TRANSISTOR e Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IB=500mA ;VBE=-1.7V;L=40mH IE |
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SavantIC |
SILICON POWER TRANSISTOR TYP. www.datasheet4u.com S2055 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC= |
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SavantIC |
SILICON POWER TRANSISTOR e Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125 VEB=5V; |
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SavantIC |
SILICON POWER TRANSISTOR er sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IB=100mA ; IB=0 |
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SavantIC |
SILICON POWER TRANSISTOR j=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC curre |
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SavantIC |
SILICON POWER TRANSISTOR N www.datasheet4u.com S2055A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH IC=4.5A ;IB=2A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC |
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