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SavantIC |
2SD762 H VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=2 A;IB=0.4 A Base-emitter on voltage IC=1A ; VCE=3V Collector cut-off current VCB=50V; IE=0 Emitter cut-off current VEB=8V; IC=0 DC current gain IC=0.1A ; VCE=3V DC |
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SavantIC |
SILICON POWER TRANSISTOR =3V CONDITIONS www.datasheet4u.com 2SD762 2SD762A SYMBOL MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 1.0 1.2 30 1 40 30 160 V V µA mA VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-e |
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SavantIC |
SILICON POWER TRANSISTOR =3V CONDITIONS www.datasheet4u.com 2SD762 2SD762A SYMBOL MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 1.0 1.2 30 1 40 30 160 V V µA mA VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-e |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA; RBE=; IE=50mA; IC=0 IC=3A; IB=6mA IC=6A; IB=60mA IC=3A; IB=6mA IC=6A; IB=60mA VCB=120V; IE=0 VCE=100V; RBE=; IC=3A ; VCE=3V 1000 M |
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