| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SavantIC |
Silicon PNP Power Transistors itter sustaining voltage BD242A BD242B IC=30mA; IB=0 BD242C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-3A;IB=-0.6 A Base-emitter on voltage IC=-3A ; VCE=-4V Collector cut-off current BD242/A VCE=-30V; IB= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
|
|
|
|
SavantIC |
Silicon PNP Power Transistors |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR -off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 55 60 MIN 110 TYP. |
|
|
|
|
SavantIC |
2SD2400 -emitter breakdown voltage IC=1mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A VBEsat Base-emitter saturation vol |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=400mA ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=1500 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC |
|
|
|
|
SavantIC |
2SD2493 VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA VBEsat Base-emitter saturation voltage IC=5A ;IB=5mA ICBO Collector cut-off current VCB=110V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=4V Cob Ou |
|
|
|
|
SavantIC |
Silicon PNP Power Transistors mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB= |
|
|
|
|
SavantIC |
Silicon PNP Power Transistors mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
|
|
|
|
SavantIC |
Silicon PNP Power Transistors |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors ning voltage BD241A BD241B IC=30mA; IB=0 BD241C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=3A;IB=0.6 A Base-emitter on voltage IC=3A ; VCE=4V Collector cut-off current BD241/A VCE=30V; IB=0 BD241B/C VCE=60 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IE=400mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; |
|