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SavantIC |
2SD1265 PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2SD1265 2SD1265A IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A VBE Base-emitter on voltage IC=1A ; VCE=3V ICBO Collector cut-off current VCB |
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SavantIC |
SILICON POWER TRANSISTOR 2SD1275 2SD1275A VCB=60V; IE=0 CONDITIONS www.datasheet4u.com 2SD1275 2SD1275A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 2.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage |
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SavantIC |
SILICON POWER TRANSISTOR r voltage 2SD1266 IC=30mA ,IB=0 2SD1266A IC=3A, IB=0.375A IC=3A ; VCE=4V VEB=6V; IC=0 2SD1266 2SD1266A 2SD1266 2SD1266A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1266 2SD1266A SYMBOL MIN 60 TYP. MAX UNIT VCEO V 80 1.2 1.8 1 V V mA VCEs |
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SavantIC |
SILICON POWER TRANSISTOR =0 2SD1271A IC=5A ;IB=0.25A IC=5A ;IB=0.25A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=0.5A ; VCE=10V CONDITIONS www.datasheet4u.com 2SD1271 2SD1271A SYMBOL MIN 80 TYP. MAX UNIT VCEO Collector-emitter voltage V 100 0.5 1. |
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SavantIC |
SILICON POWER TRANSISTOR 0 VCE=200V; IB=0 VCE=350V; VBE=0 VCE=400V; VBE=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V CONDITIONS www.datasheet4u.com 2SD1263 2SD1263A SYMBOL MIN 250 TYP. MAX UNIT VCEO Collector-emitter voltage V 300 1.0 1.5 1.0 1.0 1.0 1.0 1.0 70 10 30 MHz 250 |
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SavantIC |
SILICON POWER TRANSISTOR r voltage 2SD1266 IC=30mA ,IB=0 2SD1266A IC=3A, IB=0.375A IC=3A ; VCE=4V VEB=6V; IC=0 2SD1266 2SD1266A 2SD1266 2SD1266A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1266 2SD1266A SYMBOL MIN 60 TYP. MAX UNIT VCEO V 80 1.2 1.8 1 V V mA VCEs |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current DC current gain Transition frequency Fall time www.datasheet4u.com 2SD1274 2SD1274A 2SD1274B SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE CONDITIONS IC=0.2A, L=25mH IE=1mA, |
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SavantIC |
SILICON POWER TRANSISTOR 2SD1277A IC=4A; IB=8mA IC=4A ;IB=8mA VCB=60V ;IE=0 0.1 2SD1277A VCB=80V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=3V IC=4A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 500 2000 20 10000 MHz 2 mA mA 80 1.5 2 V V CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL V(BR)CEO Collector |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Base-emitter on voltage Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=100mA ;IE=0 IC=0.5A ;IB=1mA IC=1A; IB=1mA IC=0.5A;VCE=5V VEB=6V; IC=0 IC=0.5A ; VCE=5V 2000 MIN 45 45 www.datasheet4u.com 2SD1208 SYMBOL VCE |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ; IE=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA; IE=0 IE |
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SavantIC |
SILICON POWER TRANSISTOR oltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=< IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.15A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; V |
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SavantIC |
SILICON POWER TRANSISTOR age Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.3A VCB=80V; |
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SavantIC |
SILICON POWER TRANSISTOR kdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=60V; IE=0 VEB=5V |
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SavantIC |
SILICON POWER TRANSISTOR 0 VCE=200V; IB=0 VCE=350V; VBE=0 VCE=400V; VBE=0 IC=0.3A ; VCE=10V IC=1A ; VCE=10V CONDITIONS www.datasheet4u.com 2SD1263 2SD1263A SYMBOL MIN 250 TYP. MAX UNIT VCEO Collector-emitter voltage V 300 1.0 1.5 1.0 1.0 1.0 1.0 1.0 70 10 30 MHz 250 |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter voltage 2SD1264A VCBO VEBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base voltage Emitter-base voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain |
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SavantIC |
SILICON POWER TRANSISTOR B=5V; IC=0 2SD1267 2SD1267A 2SD1267 2SD1267A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1267 2SD1267A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 1.5 2.0 1.0 V V mA VCEsat VBE IEBO Collector-emitter s |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=4A; IB=0.2A IC=4A ;IB=0.2A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=0.5A;VCE=10V;f=10MHz 4 |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current DC current gain Transition frequency Fall time www.datasheet4u.com 2SD1274 2SD1274A 2SD1274B SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE CONDITIONS IC=0.2A, L=25mH IE=1mA, |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current DC current gain Transition frequency Fall time www.datasheet4u.com 2SD1274 2SD1274A 2SD1274B SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE CONDITIONS IC=0.2A, L=25mH IE=1mA, |
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