No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
Silicon NPN Power Transistors =5A;IB=1.25 A Base-emitter saturation voltage IC=5A;IB=1.25 A VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO ICBO ICES hFE-1 Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain VEB=4V I |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Forward voltage of damper diode Fall time CONDITIONS IC=400mA ;IB=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=5A ; IB=1.25A IC=5A ; IB=1.25A IF=8A ICP=5A;IB1=1A; fH=31.5kHz 0.2 6 4 MIN 6 |
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SavantIC |
SILICON POWER TRANSISTOR -emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V; IE=0 VEB=5V; I |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC=0 IC=1.8A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-0.35A |
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SavantIC |
SILICON POWER TRANSISTOR ess otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Tr |
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SavantIC |
SILICON POWER TRANSISTOR ge Base-emitter saturation voltage Emitter-base breakdown voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage CONDITIONS IC=6A;IB=1.5 A IC=6 |
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SavantIC |
SILICON POWER TRANSISTOR urrent DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=800V ;IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=-0.25A ; VCE=12V f=1MHz ; VCB=10V 10 MIN 550 www.datasheet4u.com 2SC5239 S |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE=7 IC=1A;IB=0.2A IC=1A;IB=0.2A VCB=600V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=-0.3A ; VCE=12V VCB=10V;f=1MHz |
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SavantIC |
SILICON POWER TRANSISTOR -off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2.5A;IB=0.5A IC=2.5A;IB=0.5A VCB=300V; IE=0 VEB=7V; IC=0 IC=2.5A ; VCE=2V IC=1mA ; VCE=2V IE=-0.5A ; VCE=12V VCB= |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25 A IC=100mA;IB=0 VEB=4V ;IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=8A;IB=2 A IC=8A;IB=2 A IC=100mA;IB=0 VEB=4V ;IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; |
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