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SavantIC |
2SC4549 ARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-of |
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SavantIC |
2SC4517A r-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC= |
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SavantIC |
2SC4507 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ; |
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SavantIC |
2SC4538 ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitte |
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SavantIC |
2SC4542 NDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT Collector-emitter breakdown voltage IC=5mA ;IB=0 IC=7A; IB=1.7A IC=7A; IB=1.7A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IE=0.1A ; VCE=10V 600 |
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SavantIC |
2SC4585 PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A VBEsat Base-emitter saturation voltage IC=5A; IB=1 A VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0 IEBO Emitter cut-off current At rated voltage ICB |
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SavantIC |
2SC4508 IC=1mA ; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A ICBO Collector cut-off current VCB=450V; IE=0 IEBO Emitter |
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SavantIC |
SILICON POWER TRANSISTOR V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ; |
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SavantIC |
SILICON POWER TRANSISTOR V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A |
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SavantIC |
SILICON POWER TRANSISTOR ICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter |
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SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0; VCB |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC= |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A |
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SavantIC |
SILICON POWER TRANSISTOR se specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC curre |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; |
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SavantIC |
SILICON POWER TRANSISTOR CONDITIONS IC=25mA ; IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 50 MIN 80 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT 2SC4511 TYP. MAX UNIT V 0.5 10 10 180 110 20 V µA µA pF MHz Swit |
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SavantIC |
SILICON POWER TRANSISTOR ncy CONDITIONS IC=25mA; RBE=6 IC=2A; IB=0.2A VCB=120V ;IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V f=1MHz; VCB=10V IE=-0.5A ; VCE=12V 50 110 20 pF MHz MIN 80 0.5 10 10 TYP. MAX UNIT V V µA µA SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT Switching times ton ts |
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SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0; VCB |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC= |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=200mA ;IC=0 IC=7A; IB=1.7A IC=7A; IB=1.7A VCB=500V; IE=0 VEB=5V; I |
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