| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR rs 2SC3748 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off |
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SavantIC |
SILICON POWER TRANSISTOR -emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency 2SC3795 2SC3795A CONDITIONS IC=0.2A , L=25mH IC=3A |
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SavantIC |
2SC3725 725 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off |
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SavantIC |
SILICON POWER TRANSISTOR lector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A;IB=0.3A IC=6A;IB=0.3A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V, f=1MH |
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SavantIC |
SILICON POWER TRANSISTOR 725 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off |
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SavantIC |
SILICON POWER TRANSISTOR METER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ;R |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE= |
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SavantIC |
2SC3710 ;IB=0.3A VBEsat Base-emitter saturation voltage IC=6A;IB=0.3A ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=1A ; VCE=1V hFE-2 DC current gain IC=6A ; VCE=1V COB Output ca |
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SavantIC |
SILICON POWER TRANSISTOR PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDI |
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SavantIC |
SILICON POWER TRANSISTOR -emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency 2SC3795 2SC3795A CONDITIONS IC=0.2A , L=25mH IC=3A |
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SavantIC |
SILICON POWER TRANSISTOR oltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS |
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SavantIC |
SILICON POWER TRANSISTOR own voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDIT |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IC=4A ;IB=1A IC=4A ;IB=1A VCB=800V ;IE=0 VCE=1200V; RBE=0 VEB=4V ;IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 8 4 MIN 800 2SC3756 SYMBOL VCEO(SUS) VCEsat VBEsat |
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SavantIC |
SILICON POWER TRANSISTOR n voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-of |
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SavantIC |
SILICON POWER TRANSISTOR ector-emitter saturation voltage Base-emitter saturation voltage 2SC3794 2SC3794A CONDITIONS IC=0.2A , L=25mH IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 SYMBOL VCEO(SUS) VCEsat VBEsat 2SC3794 2SC3794A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICB |
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SavantIC |
SILICON POWER TRANSISTOR ector-emitter saturation voltage Base-emitter saturation voltage 2SC3794 2SC3794A CONDITIONS IC=0.2A , L=25mH IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 SYMBOL VCEO(SUS) VCEsat VBEsat 2SC3794 2SC3794A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICB |
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