| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SavantIC |
Silicon NPN Power Transistors er saturation voltage IC=6A; IB=0.3A VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.4A VBEsat-1 Base-emitter saturation voltage IC=6A; IB=0.3A VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.4A ICBO Collector cut-off current I |
|
|
|
|
SavantIC |
2SC3626 PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A VBEsat Base-emitter saturatio |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR er saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=5A ;IB=1.2A IC=5A ;IB=1.2A VCE=1500V; RBE=0 VEB=4V; IC=0 IC=1A ; VCE=5V 8 MIN 800 5 1.5 1 1 TYP. MAX |
|
|
|
|
SavantIC |
2SC3678 ge IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR aturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCB=240V;IE=0 VEB=7V;IC=0 IC=10mA ;IB=1mA IC=10mA ;IB=1mA IC=4mA ; VCE=10V IC=20mA ; VCE=10V IE=0; VCB=20V;f=1MHz IC= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR eakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=4 A;IB=0. |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ase-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V 8 MIN 500 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 2SC |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A; IB=0.4A IC=2A ;IB=0.4A VCB=800V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR er saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=4A ;IB=1A IC=4A ;IB=1A VCE=1500V; RBE=0 VEB=4V; IC=0 IC=1A ; VCE=5V 8 MIN 800 5 1.5 1 1 TYP. MAX UNIT |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=6A; IB=0.6A,L= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capac |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=5 A;IB=0.5 A IC=5 A;IB=0.5 A VCB=200V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1.4A ; VCE=5V 8 MIN 5 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Fall time CONDITIONS IC=5A; IB=1.25A IC=5A; IB=1.25A VCB=1200V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IF=6A IC=5A ; IB1=1A;IB2=-2.5A;LB=0 8 MIN 2SC3658 SYMBOL VCEsat VBEsat ICBO IEBO hFE VECF tf TYP. MAX 2.0 1.5 0.5 500 UNIT V V mA mA 2.0 0.5 V µs |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0 ; VCB=10V; |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ,IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ge Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ;IB=0A IC=8A ; IB=2.0A IC=8A ; IB=2.0A VCE=1500V; RBE=0V VEB=4V; IC=0A IC=1A ; VCE=5V 8 MIN 800 2SC3688 SYMBOL VCEO(SUS) VCEsat |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR e-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A; IB=0.3A |
|