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SavantIC |
2SC3320 4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE= |
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SavantIC |
SILICON POWER TRANSISTOR sistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut- |
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SavantIC |
SILICON POWER TRANSISTOR down voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A |
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SavantIC |
2SC3300 oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=10A ;IB=1A IC=10A ;IB=1A VCB=100V; IE=0 VEB=6V; IC=0 I |
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SavantIC |
SILICON POWER TRANSISTOR istors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off curr |
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SavantIC |
SILICON POWER TRANSISTOR cified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gai |
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SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1mA ;IE=0 IC=10mA ;IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=60V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1 |
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SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6 |
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SavantIC |
SILICON POWER TRANSISTOR llector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 500 2 |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.3A ; VCE=5V 15 MIN 500 6 5.0 1.5 10 |
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SavantIC |
SILICON POWER TRANSISTOR oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=10A ;IB=1A IC=10A ;IB=1A VCB=100V; IE=0 VEB=6V; IC=0 I |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=:,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=: IC=5A ; VCE=5V |
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SavantIC |
SILICON POWER TRANSISTOR ETER Collector-emitter breakdown voltage Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-o |
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SavantIC |
SILICON POWER TRANSISTOR sistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut- |
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SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,L=100mH;RBE=: IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE=: IC=0.5A ; VCE=5V IC=3A ; V |
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SavantIC |
SILICON POWER TRANSISTOR tor-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=9;L=100mH IE=10mA; IC=0 IC=7.5A; IB=1.5A IC=7.5A; IB=1.5A VCB=400V; IE=0 VCE=35 |
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