| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
2SC2275 |
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SavantIC |
2SC2275A |
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SavantIC |
SILICON POWER TRANSISTOR n voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Tran |
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SavantIC |
SILICON POWER TRANSISTOR ER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=2A; IB=0.4A IC=2A; |
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SavantIC |
SILICON POWER TRANSISTOR r sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; |
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SavantIC |
SILICON POWER TRANSISTOR ARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100k= IE=0.1mA ;IC=0 IC=50mA ;I |
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SavantIC |
SILICON POWER TRANSISTOR TYP. MAX UNIT 2SC2275 V(BR)CEO Collector-emitter breakdown voltage 2SC2275A IC=25mA ,IB=0 120 V 150 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Co |
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SavantIC |
2SC2244 erwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25 |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=1.5A ;IB=150mA IC=2A ;IB=0.2A VCB=20V; IE=0 VCE=10V; IB=0 VEB=5V; IC=0 IC= |
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SavantIC |
SILICON POWER TRANSISTOR n voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Tran |
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SavantIC |
SILICON POWER TRANSISTOR sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=450V; I |
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SavantIC |
SILICON POWER TRANSISTOR toff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100k< IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE= |
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SavantIC |
SILICON POWER TRANSISTOR current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=180V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 30 MIN 120 6 2SC2261 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V |
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SavantIC |
SILICON POWER TRANSISTOR TYP. MAX UNIT 2SC2275 V(BR)CEO Collector-emitter breakdown voltage 2SC2275A IC=25mA ,IB=0 120 V 150 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Co |
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SavantIC |
2SC2239 IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=500A; IB=50mA VBE Base-emitter on voltage IC=500mA ; VCE=5V ICBO Collector cut-off current VCB=160V ;IE=0 IEBO Emitter cut-off |
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SavantIC |
SILICON POWER TRANSISTOR n voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Tran |
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SavantIC |
SILICON POWER TRANSISTOR ge Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=500A; IB=50mA IC=500mA ; VCE=5V VCB=160V ;IE=0 VEB=5V; IC=0 IC=100mA ; VCE=5 |
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SavantIC |
SILICON POWER TRANSISTOR current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 30 MIN 100 6 2SC2260 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V |
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SavantIC |
SILICON POWER TRANSISTOR current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 30 MIN 140 6 2SC2262 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=400V; |
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