| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VC |
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SavantIC |
SILICON POWER TRANSISTOR A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VC |
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SavantIC |
SILICON POWER TRANSISTOR se-emitter saturation voltage 2SC1226 V(BR)CBO Collector-base breakdown voltage 2SC1226A 2SC1226 V(BR)CEO Collector-emitter breakdown voltage 2SC1226A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off curre |
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SavantIC |
SILICON POWER TRANSISTOR se-emitter saturation voltage 2SC1226 V(BR)CBO Collector-base breakdown voltage 2SC1226A 2SC1226 V(BR)CEO Collector-emitter breakdown voltage 2SC1226A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off curre |
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SavantIC |
SILICON POWER TRANSISTOR PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDI |
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SavantIC |
SILICON POWER TRANSISTOR off current DC current gain CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=2 A;IB=1A IC=2 A;IB=1A VCB=1000V;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=5V 3 MIN 350 5 2SC1295 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 5.0 1.5 0.1 0.1 |
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SavantIC |
Silicon NPN Transistor VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off c |
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SavantIC |
SILICON POWER TRANSISTOR down voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50µA ;IE=0 IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50mA ;IB=5mA VCB=300V;IE=0 |
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Savantic |
Silicon NPN Power Transistors antIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 CONDITIONS IC=1A ;IB=50mA MIN SYMBOL D44C Series TYP. MAX UNIT VCEsat Collec |
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