| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR 0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage I |
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SavantIC |
Silicon NPN Transistor tor-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V |
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SavantIC |
SILICON POWER TRANSISTOR VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1098 V(BR)CEO Collector-emitter breakdown voltage 2SC1098A hFE-1 hFE-2 ICBO IEBO COB fT DC current gain DC current gain Collector cut-off current Emitter |
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SavantIC |
SILICON POWER TRANSISTOR age Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V |
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SavantIC |
Silicon NPN Transistor ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=5V |
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SavantIC |
SILICON POWER TRANSISTOR r-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector |
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SavantIC |
(2SC1079 / 2SC1080) SILICON POWER TRANSISTOR BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC= |
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SavantIC |
SILICON POWER TRANSISTOR VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1098 V(BR)CEO Collector-emitter breakdown voltage 2SC1098A hFE-1 hFE-2 ICBO IEBO COB fT DC current gain DC current gain Collector cut-off current Emitter |
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SavantIC |
Silicon NPN Transistor Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1096 TYP. MAX UNIT VCEsat VBEsat V(BR)CEO ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage |
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SavantIC |
Silicon NPN Power Transistors breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=0.1mA ; IB=0 IE=1µA; IC=0 IC=20mA; IB=2mA IC=20mA; IB=2mA VCE=200V; IB=0 |
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SavantIC |
Silicon NPN Transistor or-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off c |
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SavantIC |
SILICON POWER TRANSISTOR eakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=150m A;IB=30mA 5.0 V VBEsat Base-emitter saturation voltage IC=150m A;IB=30mA 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut |
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SavantIC |
SILICON POWER TRANSISTOR on voltage IC=750mA; IB=75m A 5.0 V VBEsat Base-emitter saturation voltage IC=750mA; IB=75m A 1.4 V VCB=50V;IE=0 ICBO Collector cut-off current VCB=800V;IE=0 0.2 mA 5.0 IEBO Emitter cut-off current VEB=8V; IC=0 4 mA hFE DC current ga |
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SavantIC |
SILICON POWER TRANSISTOR 1000 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.4A 2.0 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V;IC=0 10 µA h |
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SavantIC |
(2SC1079 / 2SC1080) SILICON POWER TRANSISTOR BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC= |
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SavantIC |
SILICON POWER TRANSISTOR se specified SYMBOL PARAMETER CONDITIONS MIN 2SC1096 TYP. MAX UNIT VCEsat VBEsat V(BR)CEO ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off cu |
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SavantIC |
Silicon NPN Power Transistors t VCB=300V; IE=0 ICEO Collector cut-off current VCE=300V; IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=0.3A ; VCE=5V www.jmnic.com 2SC1050 MIN TYP. MAX UNIT 300 V 1.2 V 1.5 V 0.1 mA 0.5 mA 0.1 mA 30 200 2 Product Sp |
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SavantIC |
Silicon NPN Power Transistors t VCB=300V; IE=0 ICEO Collector cut-off current VCE=300V; IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=0.3A ; VCE=5V www.jmnic.com 2SC1050 MIN TYP. MAX UNIT 300 V 1.2 V 1.5 V 0.1 mA 0.5 mA 0.1 mA 30 200 2 Product Sp |
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SavantIC |
Silicon NPN Power Transistors breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=0.1mA ; IB=0 IE=1µA; IC=0 IC=20mA; IB=2mA IC=20mA; IB=2mA VCE=200V; IB=0 |
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Savantic |
Silicon NPN Power Transistors antIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 CONDITIONS IC=1A ;IB=50mA MIN SYMBOL D44C Series TYP. MAX UNIT VCEsat Collec |
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