logo

SavantIC BUW DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BUW11AF

SavantIC
SILICON POWER TRANSISTOR
wise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25mH BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEs
Datasheet
2
BUW13A

SavantIC
SILICON POWER TRANSISTOR
W13 BUW13A IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13 BUW13A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A;
Datasheet
3
BUW49

SavantIC
SILICON POWER TRANSISTOR
unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut
Datasheet
4
BUW12A

SavantIC
SILICON POWER TRANSISTOR
licon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW12 IC=0.1A ; IB=0; L=25mH BUW12A IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS www.datasheet4u.com BUW12 BUW12A SYMBOL MIN 400 TYP. MAX UNIT V
Datasheet
5
BUW13W

SavantIC
SILICON POWER TRANSISTOR
er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW13W IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W BUW13AW BUW13W BUW13AW IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13W BUW13AW SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) C
Datasheet
6
BUW35

SavantIC
SILICON POWER TRANSISTOR
e Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=8A; IB=2.5A IC=8A; IB=2.5A VCE=800V ;VBE=0 TC=125 VEB=7V; IC=0 IC=1
Datasheet
7
BUW48

SavantIC
SILICON POWER TRANSISTOR
ARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition freque
Datasheet
8
BUW11

SavantIC
SILICON POWER TRANSISTOR
Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW11 IC=0.1A ; IB=0; L=25mH BUW11A BUW11 BUW11A BUW11 BUW11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11 BUW11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-
Datasheet
9
BUW11A

SavantIC
SILICON POWER TRANSISTOR
Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW11 IC=0.1A ; IB=0; L=25mH BUW11A BUW11 BUW11A BUW11 BUW11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11 BUW11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-
Datasheet
10
BUW11F

SavantIC
SILICON POWER TRANSISTOR
wise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25mH BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEs
Datasheet
11
BUW12

SavantIC
SILICON POWER TRANSISTOR
licon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW12 IC=0.1A ; IB=0; L=25mH BUW12A IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS www.datasheet4u.com BUW12 BUW12A SYMBOL MIN 400 TYP. MAX UNIT V
Datasheet
12
BUW13

SavantIC
SILICON POWER TRANSISTOR
W13 BUW13A IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13 BUW13A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A;
Datasheet
13
BUW13AF

SavantIC
SILICON POWER TRANSISTOR
wise specified PARAMETER BUW13F IC=0.1A ; IB=0; L=25mH BUW13AF BUW13F BUW13AF BUW13F BUW13AF IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13F BUW13AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsa
Datasheet
14
BUW13F

SavantIC
SILICON POWER TRANSISTOR
wise specified PARAMETER BUW13F IC=0.1A ; IB=0; L=25mH BUW13AF BUW13F BUW13AF BUW13F BUW13AF IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13F BUW13AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsa
Datasheet
15
BUW13AW

SavantIC
SILICON POWER TRANSISTOR
er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW13W IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W BUW13AW BUW13W BUW13AW IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUW13W BUW13AW SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) C
Datasheet
16
BUW24

SavantIC
SILICON POWER TRANSISTOR
turation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 10 15
Datasheet
17
BUW34

SavantIC
SILICON POWER TRANSISTOR
e Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A; IB=1A IC=5A; IB=1A VCE=500V ;VBE=0 TC=125 VEB=7V; IC=0 IC=1A ;
Datasheet
18
BUW36

SavantIC
SILICON POWER TRANSISTOR
e Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=8A; IB=2.5A IC=8A; IB=2.5A VCE=900V ;VBE=0 TC=125 VEB=7V; IC=0 IC=1
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact