| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR RAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV42 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO Collector-emitter sustaining voltage IC=0.2A ; L=25mH IE=50mA; IC=0 IC=2A; IB=0.13A Tj=100 IC=4A; I |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage BUV47 BUV47B BUV47 BUV47B BUV47 BUV47B CONDITIONS IE=10mA; IC=0 IC=0.2A; IB=0;L=25mH IC=5A; IB=1A 1.5 IC=6A; IB=1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collect |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com BUV26A SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR rs CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV27 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IE=50m |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR se specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS www.datasheet4u.com BUV46 BUV46A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat-1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR pecified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV50 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH 125 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 IC=10A; IB=0.5A TC=100 IC=20A; IB |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA ;IB=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=3.2A ; VCE=2V IC=0.5A ; VCE=10V 5 9 MI |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV26 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com BUV27A SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IE= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=30m A ;IB=0 IC=3A ;IB=0.3 A IC=6A; IB=0.6A IC=6A; IB=0.6A VCB |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR se specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS www.datasheet4u.com BUV46 BUV46A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat-1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage BUV47 BUV47B BUV47 BUV47B BUV47 BUV47B CONDITIONS IE=10mA; IC=0 IC=0.2A; IB=0;L=25mH IC=5A; IB=1A 1.5 IC=6A; IB=1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current C |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR RISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collect |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector c |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collec |
|