| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ied PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0;L=25mH IC=5A; IB=1A IC= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ICS Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11 BUT11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ss otherwise specified PARAMETER BUT76 IC=500mA ;LC=125mH BUT76A IE=1mA ;IC=0 IC=6A ;IB=1.2A CONDITIONS www.datasheet4u.com BUT76 BUT76A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 V V(BR)EBO Emitter-b |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS www.datasheet4u.com BUT12F BUT12AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SU |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11F IC=0.1A; IB=0 BUT11AF BUT11F BUT11AF BUT11F BUT11AF BUT11F BUT11AF IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11F BUT11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Col |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ed PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0;L=25mH IC=2.5A; IB=0.5A |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR current gain DC current gain Transition frequency CONDITIONS IC=100mA ;LC=125mH IE=1mA ;IC=0 IC=4A ;IB=0.8A VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz 15 4 MIN 450 6 www.datasheet4u.com BUT56AF SYMBOL V(BR)CEO |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11F IC=0.1A; IB=0 BUT11AF BUT11F BUT11AF BUT11F BUT11AF BUT11F BUT11AF IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11F BUT11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Col |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS www.datasheet4u.com BUT12F BUT12AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SU |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=1A ; VCE=5V CONDITIONS www.datasheet4u.com BUT18 BUT18A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1.3 1.0 2.0 1.0 2.0 10 10 10 35 35 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V CONDITIONS www.datasheet4u.com BUT18F BUT18AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1. |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V CONDITIONS www.datasheet4u.com BUT18F BUT18AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1. |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ICS Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11 BUT11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR 0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=1A ; VCE=5V CONDITIONS www.datasheet4u.com BUT18 BUT18A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1.3 1.0 2.0 1.0 2.0 10 10 10 35 35 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ss otherwise specified PARAMETER BUT76 IC=500mA ;LC=125mH BUT76A IE=1mA ;IC=0 IC=6A ;IB=1.2A CONDITIONS www.datasheet4u.com BUT76 BUT76A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 V V(BR)EBO Emitter-b |
|