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SavantIC BD9 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BD902

SavantIC
(BD900 / BD902) SILICON POWER TRANSISTOR
breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC to
Datasheet
2
BD901

SavantIC
SILICON POWER TRANSISTOR
voltage BD897 IC=100mA, IB=0 BD899 BD901 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD895 BD897 ICEO Collector cut-off current BD899 BD901 IEBO hFE VEC ton toff Emitt
Datasheet
3
BD943

SavantIC
SILICON POWER TRANSISTOR
C current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=22V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=1V IC=0.25A ; VCE=10V 85 3 MIN 22 7 TYP. www.datasheet4u.com BD943 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEs
Datasheet
4
BD900

SavantIC
(BD900 / BD902) SILICON POWER TRANSISTOR
breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC to
Datasheet
5
BD953

SavantIC
SILICON POWER TRANSISTOR
DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=100V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 100 7 TYP. www.datasheet4u.com BD953
Datasheet
6
BD949

SavantIC
SILICON POWER TRANSISTOR
C current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 60 7 TYP. www.datasheet4u.com BD949 SYMB
Datasheet
7
BD939F

SavantIC
SILICON POWER TRANSISTOR
off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=120V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 10
Datasheet
8
BD941F

SavantIC
SILICON POWER TRANSISTOR
off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 14
Datasheet
9
BD900A

SavantIC
SILICON POWER TRANSISTOR
wn voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A BD896A ICEO Collector cut-off current BD898A BD900A IEBO hFE VEC ton toff Emitter cut-off current DC
Datasheet
10
BD941

SavantIC
SILICON POWER TRANSISTOR
t gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 140 7 TYP. www.datasheet4u.com BD941 SYMBOL V
Datasheet



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