No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
(BD900 / BD902) SILICON POWER TRANSISTOR breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC to |
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SavantIC |
SILICON POWER TRANSISTOR voltage BD897 IC=100mA, IB=0 BD899 BD901 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD895 BD897 ICEO Collector cut-off current BD899 BD901 IEBO hFE VEC ton toff Emitt |
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SavantIC |
SILICON POWER TRANSISTOR C current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=22V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=1V IC=0.25A ; VCE=10V 85 3 MIN 22 7 TYP. www.datasheet4u.com BD943 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEs |
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SavantIC |
(BD900 / BD902) SILICON POWER TRANSISTOR breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC to |
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SavantIC |
SILICON POWER TRANSISTOR DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=100V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 100 7 TYP. www.datasheet4u.com BD953 |
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SavantIC |
SILICON POWER TRANSISTOR C current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2A ; VCE=4V IC=0.5A ; VCE=4V 40 20 3 MIN 60 7 TYP. www.datasheet4u.com BD949 SYMB |
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SavantIC |
SILICON POWER TRANSISTOR off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=120V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 10 |
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SavantIC |
SILICON POWER TRANSISTOR off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 14 |
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SavantIC |
SILICON POWER TRANSISTOR wn voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A BD896A ICEO Collector cut-off current BD898A BD900A IEBO hFE VEC ton toff Emitter cut-off current DC |
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SavantIC |
SILICON POWER TRANSISTOR t gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 140 7 TYP. www.datasheet4u.com BD941 SYMBOL V |
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