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SavantIC |
Silicon PNP Power Transistors itter sustaining voltage BD242A BD242B IC=30mA; IB=0 BD242C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-3A;IB=-0.6 A Base-emitter on voltage IC=-3A ; VCE=-4V Collector cut-off current BD242/A VCE=-30V; IB= |
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SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
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SavantIC |
Silicon PNP Power Transistors |
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SavantIC |
SILICON POWER TRANSISTOR on Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C -80 -100 IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A |
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SavantIC |
SILICON POWER TRANSISTOR C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 |
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SavantIC |
SILICON POWER TRANSISTOR NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC |
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SavantIC |
SILICON POWER TRANSISTOR on Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C -80 -100 IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A |
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SavantIC |
Silicon PNP Power Transistors mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB= |
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SavantIC |
Silicon PNP Power Transistors mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB= |
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SavantIC |
SILICON POWER TRANSISTOR C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 |
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SavantIC |
SILICON POWER TRANSISTOR 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; |
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SavantIC |
SILICON POWER TRANSISTOR 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; |
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SavantIC |
SILICON POWER TRANSISTOR NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC |
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SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
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SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
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SavantIC |
SILICON POWER TRANSISTOR Power Transistors BD249/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C 80 100 IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A |
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SavantIC |
SILICON POWER TRANSISTOR on Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C -80 -100 IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A |
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SavantIC |
SILICON POWER TRANSISTOR on Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C -80 -100 IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A |
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SavantIC |
Silicon PNP Power Transistors |
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SavantIC |
Silicon NPN Power Transistors ning voltage BD241A BD241B IC=30mA; IB=0 BD241C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=3A;IB=0.6 A Base-emitter on voltage IC=3A ; VCE=4V Collector cut-off current BD241/A VCE=30V; IB=0 BD241B/C VCE=60 |
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