| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
2SB600 ctor-emitter saturation voltage IC=-10A; IB=-1A VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A ICBO Collector cut-off current VCB=-200V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-2A ; VCE=-5V fT Transit |
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SavantIC |
SILICON POWER TRANSISTOR ase breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO |
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SavantIC |
SILICON POWER TRANSISTOR 1mA ;IE=0 IE=-1mA ;IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-4V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-4V -80 V Collector-base breakdown voltage -100 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V Base |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-3A, IB1=-3mA,L=1mH IC=-3A ,IB=-3mA IC=-3A ,IB=-3mA VCB=-100V, |
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