No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
2SB1647 llector-emitter saturation voltage IC=-10A ;IB=-10mA VBEsat Base-emitter saturation voltage IC=-10A ;IB=-10mA ICBO Collector cut-off current VCB=-150V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-10A ; VCE=-4V Co |
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SavantIC |
2SB1655 oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-2A ;IB=-0 |
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SavantIC |
SILICON POWER TRANSISTOR ent Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-60V ;IE=0 VEB=-7V ;IC=0 IC=-0.5A ; VCE=-5V IC=-2A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-2A ;IB=-0.1A IC=-2A ;IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; V |
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SavantIC |
SILICON POWER TRANSISTOR fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-2A ;IB=-0.1A IC=-2A ;IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; V |
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SavantIC |
SILICON POWER TRANSISTOR 2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=-10A ;IB=-0.33A IC=-10A ;IB=-0.33A VCB=-40V; IE |
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SavantIC |
SILICON POWER TRANSISTOR 2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=-10A ;IB=-0.33A IC=-10A ;IB=-0.33A VCB=-40V; IE |
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SavantIC |
SILICON POWER TRANSISTOR VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB1605 2SB1605A MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB1605 2SB1605A 2SB1605 2SB1 |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-5A ;IB=-5mA IC=-5A ;IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-12V 5000 |
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SavantIC |
SILICON POWER TRANSISTOR tter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-5m A IC=-5 A;IB=-5m A VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 MIN -110 SYMBOL VCEO |
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SavantIC |
SILICON POWER TRANSISTOR off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V f=1MHz;VCB=-10V 5000 MI |
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SavantIC |
SILICON POWER TRANSISTOR itter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-2.5A; IB=-0.25A IC=-0.5A;VCE=-5V VCB=-60V; |
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SavantIC |
SILICON POWER TRANSISTOR itter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output |
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SavantIC |
SILICON POWER TRANSISTOR VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB1605 2SB1605A MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB1605 2SB1605A 2SB1605 2SB1 |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-4A ; IB=-0.2A IC=-4A ; IB=-0.2A VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A ; V |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-5A ; IB=-0.25A IC=-5A ; IB=-0.25A VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V |
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SavantIC |
SILICON POWER TRANSISTOR or cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-10A ;IB=-10mA IC=-10A ;IB=-10mA VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-10A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V |
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SavantIC |
PNP Transistor e breakdown voltage IC=-50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A ICBO Collector cut-off current VC |
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SavantIC |
SILICON POWER TRANSISTOR 3 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-4A; IB=-200mA IC=-1A; IB=-100mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0; |
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