| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
2SA1718 4U.com SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=-30mA; IB=0 IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V -100 V Collector-emi |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA; IB=0 IC=-5 A;IB=-80m A IC=-5 A;IB=-80m A VCB=-70V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-1V IC=-1A ; VCE=-12V IE=0; |
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SavantIC |
SILICON POWER TRANSISTOR O VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=-30mA; IB=0 IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V -100 V Collector-emitter saturation voltage -1.5 V Base-e |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-25mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-6A;IB=-0.6 A IC=-6A;IB=-0.6 A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V 60 MIN -60 -60 -5 -0.5 -2.0 -10 -10 320 TYP. |
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SavantIC |
SILICON POWER TRANSISTOR y CONDITIONS IC=-25mA ; IB=0 IC=-2A ;IB=-0.2A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V IE=0; VCB=-10V;f=1MHz IE=0.5A ; VCE=-12V 50 MIN -80 2SA1725 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V -0.5 -10 -10 180 150 20 V µA µA |
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SavantIC |
SILICON POWER TRANSISTOR y CONDITIONS IC=-25mA; RBE=6 IC=-2A; IB=-0.2A VCB=-80V ;IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V f=1MHz; VCB=-10V IE=0.5A ; VCE=-12V 50 150 20 MIN -80 -0.5 -10 -10 180 pF MHz TYP. MAX UNIT V V µA µA SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT Switching |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB= |
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SavantIC |
SILICON POWER TRANSISTOR on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IB=0 IE=-50µA ,IC=0 IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=- |
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SavantIC |
SILICON POWER TRANSISTOR f current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-6A ;IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-14V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 1 |
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SavantIC |
SILICON POWER TRANSISTOR itter cut-off current DC current gain CONDITIONS IC=-25mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-6A;IB=-0.6 A IC=-6A;IB=-0.6 A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V 60 MIN -120 -120 -5 -2.0 -2.5 -10 -10 320 TYP. MAX UNIT V V V V V µA µA SYMBO |
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