| No. | Partie # | Fabricant | Description | Fiche Technique |
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SavantIC |
SILICON POWER TRANSISTOR capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-5A ;IB=-0.5A VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-12V 50 MIN -140 2SA1695 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT |
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SavantIC |
2SA1668 A1668 IC=-0.7A;IB=-70mA VCB=-150V;IE=0 VCB=-200V;IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SA1667 2SA1668 SYMBOL MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -200 -1 |
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SavantIC |
SILICON POWER TRANSISTOR -200V;IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SA1667 2SA1668 SYMBOL MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -200 -1.0 -10 -10 -10 60 20 60 MHz pF V µA µA µA |
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SavantIC |
SILICON POWER TRANSISTOR TICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gai |
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SavantIC |
2SA1679 PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.05A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.13A VBEsat Base-emitter saturation voltage IC=-2.5A; IB=-0.13A ICBO Collector cut-off current ICEO |
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SavantIC |
SILICON POWER TRANSISTOR |
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SavantIC |
2SA1671 mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -0.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 µA hFE DC current gain IC=-3A ; VCE=-4V 50 180 fT Tr |
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SavantIC |
2SA1667 2SA1668 IC=-25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-0.7A;IB=-70mA ICBO Collector cut-off current 2SA1667 VCB=-150V;IE=0 2SA1668 VCB=-200V;IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-0.7A ; VCE= |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter breakdown voltage IC=-10mA ; IB=0 IC=-1mA ; IE=0 IE=-1mA ; IC=0 IC=-3A ;IB=-0.1A IC=-3A ;IB=-0.1A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-2V IC=-0.5A ; VCE=-10V -30 V Collector-base breakdown voltage -30 V Emitter-base |
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SavantIC |
SILICON POWER TRANSISTOR Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off curre |
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SavantIC |
SILICON POWER TRANSISTOR er saturation voltage IC=-2A ;IB=-0.2A -0.3 -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 µA hFE-1 DC cur |
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SavantIC |
Silicon PNP Power Transistors -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.3A -0.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V; IC=0 |
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SavantIC |
2SA1672 voltage IC=-5 A;IB=-0.5 A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 µA hFE DC current gain IC=-3A ; VCE=-4V 50 180 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Swit |
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SavantIC |
SILICON POWER TRANSISTOR apacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-12V 50 MIN -120 2SA1694 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V |
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SavantIC |
2SA1670 2 A;IB=-0.2 A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 µA hFE DC current gain IC=-2A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times ton |
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SavantIC |
SILICON POWER TRANSISTOR age IC=-1mA ,IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VBE sat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collecto |
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SavantIC |
SILICON POWER TRANSISTOR Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IE=-0.1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-12V 60 80 |
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SavantIC |
SILICON POWER TRANSISTOR ltage IE=-1mA ; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.3A -0.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 µA hFE DC current gain IC=-5A ; VCE |
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SavantIC |
SILICON POWER TRANSISTOR Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off cur |
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SavantIC |
SILICON POWER TRANSISTOR Transition frequency CONDITIONS IC=-50mA; IB=0 IE=-1mA; IC=0 IC=-3 A;IB=-0.3 A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 50 MIN -120 -6 2SA1671 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -0.5 -10 |
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