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SavantIC |
2SD2394 ge IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitte |
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SavantIC |
2SD1265 PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2SD1265 2SD1265A IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A VBE Base-emitter on voltage IC=1A ; VCE=3V ICBO Collector cut-off current VCB |
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SavantIC |
2SD526 TERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Em |
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SavantIC |
SILICON POWER TRANSISTOR lector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=: IC=1mA ;IE=0 IE=1mA ;IC=0 IC=2A; IB=0.2A IC=0 |
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SavantIC |
2SD1406 Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VC |
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Savantic |
2SD5072 Transition frequency Diode forward voltage Fall time CONDITIONS IC=4 A;IB=0.8A IC=4 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A IC=4A;RL=50=;VCC=200V IB1=0.8A;IB2=-1.6A 40 8 3 MIN www.datasheet4u.com 2SD5072 SYMBOL VC |
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SavantIC |
2SD1402 breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=80 |
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SavantIC |
SILICON POWER TRANSISTOR f current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=5A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 12 170 MIN 120 TYP. w |
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SavantIC |
SILICON POWER TRANSISTOR r cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A IC=0.5A;VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 MIN 120 www.datasheet4u.com 2SD998 |
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SavantIC |
2SD234 voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB= |
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SavantIC |
SILICON POWER TRANSISTOR n voltage IC=10mA; IB=0 120 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off c |
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SavantIC |
2SD762 H VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=2 A;IB=0.4 A Base-emitter on voltage IC=1A ; VCE=3V Collector cut-off current VCB=50V; IE=0 Emitter cut-off current VEB=8V; IC=0 DC current gain IC=0.1A ; VCE=3V DC |
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SavantIC |
Silicon NPN Power Transistors m Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 |
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SavantIC |
SILICON POWER TRANSISTOR gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IE=10mA ;IC=0 IC=6A; IB=0.6A IC=6A; IB=0.6A VCB=150V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V 50 20 9 MIN 140 7 www.datasheet4u.com 2SD388 SYMBOL VCEO(SUS) V(BR)EBO VCEsat |
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SavantIC |
2SD362 Collector-emitter breakdown voltage IC=2mA; RBE=: Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A ICBO Collector cut-off current VCB= |
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SavantIC |
Silicon NPN Power Transistors down voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=5 |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V IE= |
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SavantIC |
2SD1062 kdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=< IC=1mA |
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SavantIC |
2SD1409 de forward voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 400 IC=4A ;IB=0.04A IC=4A ;IB=0.04A IE=4A; IB=0 VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V 600 |
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SavantIC |
SILICON POWER TRANSISTOR rrent Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=3 A;IB=0.3 A IC=3A ; VCE=5V VCB=80V ;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0; VCB=10V;f= |
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