| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semiconductor Corporation |
Ultrahigh-speed Switching • • • • Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2202 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. [CPH6602] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 |
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Sanyo Semiconductor |
Medium Output MOSFETs • • • Package Dimensions unit : mm 2151A [CPH6424] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to- |
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Sanyo Semiconductor |
Medium Output MOSFETs • • • N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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