| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semiconductor |
2SB1203 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Package Dimensions unit:mm 2045B [ |
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Sanyo Semiconductor Corporation |
2SB1201 · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions u |
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