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Sanyo Semiconductor |
2SD1207 · Power supplies, relay drivers, lamp drivers, and automotive wiring. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current ca |
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Sanyo Semiconductor Corporation |
2SD438 |
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Sanyo Semiconductor Corporation |
2SD863 =( –)2V, IC=( –)50mA VCE=( –)2V, IC=( –)1A VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz IC=( –)500mA, IB=( –)50mA IC=( –)500mA, IB=( –)50mA 60* 30 150 (20) 12 ( –0.2) 0.15 ( –)0.85 ( –0.7) 0.5 ( –)1.2 MHz pF pF V V V Conditions Ratings min typ max ( –)1 ( –)1 320* Un |
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Sanyo Semiconductor Corporation |
2SD1879 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semiconductor |
2SD1817 · High DC current gain. · Small and slim package permitting the 2SD1817applied sets to be made more compact. 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit:mm 2044B [ |
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Sanyo Semiconductor |
2SD2646 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • • Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20 |
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Sanyo Semiconductor |
NPN Transistor |
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Sanyo Semiconductor |
General-Purpose Amplifier Transistors Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). www.DataSheet4U.com • Wide ASO because of built-in ballast resistance. • Goode dependence of fT on current and good HF characteristic. |
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Sanyo Semiconductor Corporation |
2SD1816 · Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1216/ |
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Sanyo Semiconductor |
2SD2645 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataSheet4U.com • Adoption of MBIT process. • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 |
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Sanyo Semiconductor |
2SD1048 Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation www.DataSheet4U.com voltage. • Package Dimensions unit : mm 2018B [2SB815 / 2SD1048] 0.5 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 |
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Sanyo Semiconductor Corporation |
2SD896 · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequen |
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Sanyo Semiconductor Corporation |
2SD1801 · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions u |
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Sanyo Semiconductor Corporation |
2SD1835 · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to |
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Sanyo Semiconductor Corporation |
2SD1802 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collect |
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Sanyo Semiconductor Corporation |
2SD1853 · High DC current gain. · Low saturation voltage. w w w . D a t a S h e e t 4 U . c o m 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec |
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Sanyo Semiconductor Corporation |
2SD1841 · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1231 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage |
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Sanyo Semiconductor Corporation |
NPN Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semiconductor Corporation |
2SD2579 · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SD2579] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20. |
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Sanyo Semiconductor Corporation |
2SD1145 · Low saturation voltage. · Large current capacity and wide ASO. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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