| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
50V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=40ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-220AB EIAJ:SC-46 C:Cathode A:Anode Specification |
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Sanyo Semicon Device |
50V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=40ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-220AB EIAJ:SC-46 C:Cathode A:Anode Specification |
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Sanyo Semicon Device |
50V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=40ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-220AB EIAJ:SC-46 C:Cathode A:Anode Specification |
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Sanyo Semicon Device |
30V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:No Contact 2:Cathode 3:Anode 4:Cathode SANYO:TP trr Test |
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Sanyo Semicon Device |
50V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=40ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:Cat |
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Sanyo Semicon Device |
30V/ 4A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:Anode 4:Cathode SANYO:TP trr Test Circ |
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