| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SB1204 |
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Sanyo Semicon Device |
2SB1143 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semicon Device |
2SB1225 |
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Sanyo Semicon Device |
2SB1140 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
2SB1406 · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
2SB1134 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Packag |
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Sanyo Semicon Device |
2SB1202 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. Package Dimensions |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitaing mounting. Package Dimensions unit:mm 2041A [2SB1224/2SD1826] ( ) : 2SB1224 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emi |
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Sanyo Semicon Device |
2SB1232 · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1232 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Vo |
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Sanyo Semicon Device |
90V/ 1A Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:No Contact SANYO:TO-126LP Specification |
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Sanyo Semicon Device |
2SB1144 · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Package Dimensions unit:mm 2003A [2SB |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute |
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Sanyo Semicon Device |
15V/ 1A Rectifier • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure. • Small-sized package permitting SB10-015C-applied sets to be |
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Sanyo Semicon Device |
50V/ 1A Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:No Contact SANYO:TO-126LP Specification |
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