| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
N-Channel MOSFET • • Package Dimensions unit : mm 2083B [2SK3092] 6.5 5.0 4 1.5 Low ON-resistance. Low Qg. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP Package Dimensions unit : mm |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET • • Package Dimensions unit : mm 2091A [2SK3072] 0.5 0.4 0.16 0 to 0.1 Ultrahigh-speed switching. Low-voltage drive. 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate- |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-t |
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