| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specific |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specific |
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Sanyo Semicon Device |
2SD600 · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifi |
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