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Sanyo Semicon Device |
2SC4769 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w |
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Sanyo Semicon Device |
2SC4770 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC4770] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2 |
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Sanyo Semicon Device |
2SC4731 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. 10.5 2.6 1.4 1.2 1.0 7.5 8.5 1.6 0.5 1 2 3 0.5 Specifications ( ) : 2SA1827 Absolute Maximum Ratin |
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Sanyo Semicon Device |
NPN TRANSISTOR · High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16. |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. ( ) : 2SA1824 E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1825/2SC4729] ( ) : 2SA1825 Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA183 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V. · Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High breakdown voltage (VCEO min=2100V). · Small Cob (Cob typ=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4709] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1826/2SC4730] ( ) : 2SA1826 Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084B [2SA1827/2SC4731] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Large power type such as PC=1.5W when used without heatsink. · It is possible to make appliances more compact because its height on board is 9.5mm. · Effective in automatic inserting and counting stocked amount because of being provided for radial |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emitter-to-base voltage (VEBO≥15V). • Large power type such as PC=1.5W when used with |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4770] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. · It is possible to make appliances more compact because its height on board is 9.5mm. · Effective in automatic inserting and counting stocked amo |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · High DC current gain. · Wide ASO. · On-chip Zener diode of 60 ±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w |
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