| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SB829 · Low-saturation collector-to-emitter voltage : VCE(sat) = –0.5V max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
2SB825 · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit |
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Sanyo Semicon Device |
2SB824 · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max/IC=( –)3A, IB=( –)0.3A. ( ) : 2SB824 JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Tranasistors · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V(PNP), 0.4V(NPN) max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low-saturation collector-to-emitter voltage : VCE(sat) = –0.5V max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max/IC=( –)3A, IB=( –)0.3A. ( ) : 2SB824 JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta |
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