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Sanyo Semicon Device |
2SB1406 · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Darlington Transistor · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment. - High density surface mount applications. - Small size of 2SB1450/2SD2199-applied equipment. • Low |
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Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1454/2SD2202] ( ) : 2SB1454 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-2 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Package Dimensions unit:mm 2049B [2SB1471/2SD2223] ( ) : 2SB1471 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment. - High density surface mount applications. - Small size of 2SB1449/2SD2198-applied equipment. • Low |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment. · Low co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1455/2SD2203] ( ) : 2SB1455 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-2 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1468/2SD2219] ( ) : 2SB1468 Specifications 1 : Base 2 : |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Package Dimensions unit:mm 2049B [2SB1472/2SD2224] ( ) : 2SB1472 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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