Sanyo Semicon Device A22 fiche technique

No.	Partie #	Fabricant	Description
1	A2222	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit
2	A2210	Sanyo Semicon Device	2SA2210 • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
3	2SA2203	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Ba
4	2SA2204	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Ba
5	2SA2205	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Ba
6	2SA2207	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
7	2SA2209	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
8	2SA2210	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
9	2SA2221	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Speciﬁcations ( ): 2SA2221 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Ba
10	2SA2222	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit