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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · High power gain : PG=25dB (f=100MHz). · High cutoff frequency ; fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4432. Package Dimensions unit:mm 2018A [2SA1815] C : Collector B : Base E : Emitter Sp |
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Sanyo Semicon Device |
2SA1824 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. ( ) : 2SA1824 E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · High power gain : PG=25dB (f=100MHz). · High cutoff frequency ; fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4432. Package Dimensions unit:mm 2018A [2SA1815] C : Collector B : Base E : Emitter Sp |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA183 |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • • • • Package Dimensions unit : mm 2045B [2SA1875 / 2SC4976] 6.5 5.0 4 1.5 • High fT : fT=400MHz(typ). High breakdown voltage : VCEO≥200V(min). Large current capacitance. Small reverse transfer capacitance and excellent high -frequency character |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). · High VEBO (VEBO≥15V). |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. ( ) : 2SA1824 E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors · High breakdown voltage (VCEO min= –800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vo |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · On-chip bias resistors (R1=4.7kΩ, R2=4.7kΩ). · Very small-sized package making 2SA1864-applied sets small and slim. · High gain-bandwidth product fT. Package Dimensions unit:mm 2106A [2SA1864] 1 : Base 2 : Emitter 3 : Collector Specifications A |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · AF power amplifier, medium-speed switching, smallsized motor drivers and LED drivers. Features · Large current capacity. · Low collector-to-emitter saturation voltage. · Very small-sized pakage permitting 2SA1881/ 2SC4983-appied set to be made smal |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2038A [2SA1882/2SC4984] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications ( ) : 2SA1882 Absolute Maximum Ratings at Ta |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1896] Specifications Absolute |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Package Dimensions unit:mm 2038A [2SA |
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Sanyo Semicon Device |
2SA1866 · On-chip bias resistors (R1=47k Ω, R2=47kΩ). · Very small-sized package making 2SA1866-applied sets small and slim. · Small ON resistance. · High gain-bandwidth product f T. Package Dimensions unit:mm 2106A [2SA1866] 1 : Base 2 : Emitter 3 : Colle |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Very small-sized package permitting 2SA1814- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO (VEBO≥15V). |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of MBIT process. · Low saturation voltage. · Fast swicthing speed. · Large current capacity. · It is possible to make appliances more compact because it’s height on board is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2084 [2 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1825/2SC4729] ( ) : 2SA1825 Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1826/2SC4730] ( ) : 2SA1826 Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084B [2SA1827/2SC4731] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Adoption of FBET process. · High fT : fT=300MHz. · High breakdown voltage : VCEO=200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP. · Possible to offer the 2SA1853/2SC4827 devices in a |
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