| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt |
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Sanyo Semicon Device |
2SA1177 · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt |
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Sanyo Semicon Device |
1.1A Ultrahigh-Speed Rectifier |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Miniature package facilitates miniaturization in end products. • High breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Col |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Miniature package facilitates miniaturization in end products. • High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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